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Semiconductor Devices and Circuits

Course Number: EET 221
Transcript Title: Semiconductor Devices/Circuits
Created: September 1, 2012
Updated: May 20, 2014
Total Credits: 5
Lecture Hours: 40
Lecture / Lab Hours: 0
Lab Hours: 30
Satisfies Cultural Literacy requirement: No
Satisfies General Education requirement: No
Grading options: A-F (default), audit
Fee: $8


EET 113, MTH 112

Course Description

Introduction to semiconductor devices. Characteristics and biasing of diodes and transistors. Design and analysis of circuits using diodes, bipolar transistors, and field effect transistors. Application of transistors as amplifiers and switches. A 3-hour per week laboratory includes the application of computer tools in circuit design, evaluation, and analysis. Prerequisite: EET 113, MTH 112.

Intended Outcomes

  1. Apply concepts of semiconductor devices to design and analyze circuits.
  2. Apply fundamentals of semiconductor devices in electronics projects and use computer tools in circuit design, evaluation and analysis.

Outcome Assessment Strategies

Assessment methods are to be determined by the instructor. Typically, in class exams and quizzes, and homework assignments will be used. Lab work is typically assessed by a lab notebook, formal lab reports, performance of experiments, and possibly a lab exam.

Course Content (Themes, Concepts, Issues and Skills)

  1. Semiconductor materials, PN, NPN, and PNP junctions. Simplified description of the operation of diodes and transistors. Diode and transistor characteristic curves. The diode equation. Testing diodes and transistors.
  2. Diode applications as rectifiers, zeners, limiters, clampers, switching, and logic. Light emitting diodes, variable capacitance diodes.
  3. Bipolar junction transistors. Common base, common emitter, and common collector characteristics and biasing circuits. Bias design for BJT's. Bias stabilization using collector and emitter feedback, and voltage dividers. Transistor specifications. The transistor as a switch.
  4. Bipolar junction transistor amplifiers. AC and DC amplifier gain, input and output impedance, and effect of source and load resistance. Brief treatment of h parameters.
  5. Load line analysis of transistor amplifiers.
  6. Field effect transistors (FET's). Junction FET characteristics and biasing. Fixed bias, self-bias, and voltage divider bias. Graphical and algebraic bias solutions. Junction FET specifications.
  7. Metal oxide semi-conductor FET's (MOS-FET's). Enhancement and depletion type MOS-FET characteristics and biasing. Fixed bias, self-bias, voltage divider bias and feedback bias. Graphical and algebraic bias solutions. MOS-FET specifications.

Department Notes

In addition to introducing the basic theoretical principles of operation of diodes and transistors, the operational characteristics of the devices will be studied, and measured using curve tracers, simulation, and computer data acquisition methods. This term emphasizes diode and transistor biasing circuits, and basic transistor amplifier circuits.